Kelin J. Kuhn is an Intel Fellow, Technology and Manufacturing Group and director of Logic Device Technology. Kuhn is the device lead of the pathfinding team. Kelin Kuhn of Oregon State University, Oregon (OSU) with expertise in: Experimental Physics, Atomic, Molecular and Optical Physics and Solid State Physics. Dr. Kuhn received her B.S. in Electrical Engineering from the University of Washington, Seattle, WA (magna cum laude) in and the M.S. and Ph.D. in.

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Leaving tenure behind… Inafter a decade at the University of Washington, Kuhn left her tenured position as an associate professor of electrical and computer engineering to join Intel. Current and former consulting clients and sponsors of Silicon Valley Watcher: Previously, Kuhn was a tenured faculty member in the Department of Electrical and Computer Engineering at the University of Washington.

Amazon Music Stream millions of songs. I need to go to a new chapter. She flies a high-wing aircraft a Cessna II Sparrowhawk because it is easier to see the ground. Please try your request again later. And it allowed her to learn to play the Irish jigs and reels she loves.

The embodiments herein reduce an external klein resistance of the device. English Choose a language for shopping. That experience largely dropped out of the culture by the time she started her faculty position in due to the widespread use of integrated circuits, which made the underlying technology all but invisible. Amazon Restaurants Food delivery from local restaurants. Withoutabox Submit to Film Festivals. Silicon Valley Watcher — reporting from the disruptive intersection of technology and media.

She kwlin been involved in Intel’s manufacturing process technology development for several generations of process technology including Intel’s 45nm process technology.

Popularity Popularity Featured Price: ComiXology Thousands of Digital Comics. There’s a problem loading this menu right now. Amazon Second Chance Pass it on, trade it in, give it a second life. Laser Engineering Dec 14, A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire transistors are formed, wherein the highly doped underlayer may reduce or substantially eliminate leakage and high gate capacitance which can occur at a bottom portion of a gate structure of the nanowire transistors.

Amazon Inspire Digital Educational Resources. Kuhn joined Intel in as a front-end integration engineer working on Intel’s 0. East Dane Designer Men’s Fashion.

Some facts about Kuhn: She received her master’s and doctoral degrees in eklin engineering from Stanford University in Methods of forming low band gap source and drain structures in microelectronic devices. Kuhn is the device lead of the pathfinding team responsible for the transistor architecture for Intel’s 22 nanometer nm process technology.

The semiconductor body comprises a source region; and a drain kdlin. The Fannie and John Hertz Foundation is a not-for-profit organization c 3. Repurposing electronics is a great way to do development work. Alexa Actionable Analytics for the Web.

Leakage reduction structures for nanowire transistors. AmazonGlobal Ship Orders Internationally. Inafter a decade at the University of Washington, Kuhn left her tenured position as an associate professor of electrical and computer engineering to join Intel. The first side surface is opposite the kein side surface, the top surface is opposite the bottom surface.

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The source region or the drain region, or combinations thereof, comprise a metal layer formed on the substantially all of the first side surface, substantially all of the second side surface, and the top surface. Learn more at Author Central. The source region or kuun drain region, or combinations thereof, comprises a first side surface, a second side surface, and a top surface.

Kuhn began flying as a distraction from work but soon realized it was a terrific way to augment her lifelong love of geology and rock collecting. As the formation of the highly doped underlayer may result in gate inducted drain leakage at an interface kellin source structures and drain structures of the nanowire transistors, a thin jelin of undoped or low doped material may be formed between the highly doped underlayer and the nanowire transistors.

Kelin J. Kuhn – Engineering and Technology History Wiki

Nanowire transistor with underlayer etch stops. The present disclosure relates to the field of fabricating microelectronic devices. Are you an author? Kuhn uses an analogy to explain the move. Kuhn was the device lead for Intel’s 45nm process, which uses Hi-K metal gate transistors and represents the kepin significant change in transistor architecture in the past 40 years.